发明名称 CHARGED PARTICLE BEAM LITHOGRAPHY METHOD AND APPARATUS THEREOF
摘要 <P>PROBLEM TO BE SOLVED: To provide a method and an apparatus for reducing more drawing time. <P>SOLUTION: The lithography apparatus 100 comprises a BLK deflector 212 for turning on electron beams 200 by passing them without any deflection and turning off the beams by deflecting them, a forming deflector 205 for deflecting the electron beams 200 for forming, and an objective deflector 208 for deflecting the electron beams 200 to a predetermined position in a sample 101. At least two deflectors in the deflectors deflect different shots of electron beams 200 at the same timing, thus applying the next shot quickly and reducing drawing time accordingly. <P>COPYRIGHT: (C)2007,JPO&INPIT
申请公布号 JP2007189206(A) 申请公布日期 2007.07.26
申请号 JP20060328295 申请日期 2006.12.05
申请人 NUFLARE TECHNOLOGY INC 发明人 ABE TAKAYUKI;YASHIMA JUN
分类号 H01L21/027;G03F7/20;H01J37/305 主分类号 H01L21/027
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