| 摘要 |
PROBLEM TO BE SOLVED: To provide a vertical JFET (junction field-effect transistor) having a high uniformity in a channel width. SOLUTION: The vertical JFET 11 (junction field-effect transistor) comprises a semiconductor substrate 12, a first conductive source region 14, a first conductive channel region 16, and a second conductive gate region 18. The first conductive source region 14 is formed on an element surface of the semiconductor substrate. The first conductive channel region 16 extends from the source region to a depth direction of the semiconductor substrate, and is contiguous to a first conductive lower layer area of the semiconductor substrate. The second conductive gate region 18 is formed in a depth direction across the channel region. With the above configuration in the gate region, a plurality of concentration peaks of a second conductive impurity exists in the depth direction. COPYRIGHT: (C)2007,JPO&INPIT
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