| 摘要 |
A trench dummy element isolating region is formed in the fuse region of a semiconductor substrate. In the semiconductor substrate, a plurality of dummy element regions is formed so as to be enclosed by the trench dummy element isolating region. The occupancy rate of the plurality of dummy element regions in the fuse region is equal to or larger than a specific value. On the semiconductor substrate including the dummy element isolating region and dummy element regions, a plurality of metal fuses composed of multilayer metal wiring lines are formed via an interlayer insulating film. The plurality of dummy element regions are formed only below at least a part of the plurality of metal fuses.
|
