发明名称 Method and system for error correction in flash memory
摘要 A solid state non-volatile memory unit. The memory unit includes a multi-level solid state non-volatile memory array adapted to store data characterized by a first number of digital levels. The memory unit also includes an analog-to-digital converter having an input and an output. The input of the analog-to-digital converter is adapted to receive data from the multi-level solid state non-volatile memory array. The output of the analog-to-digital converter is adapted to output a digital signal characterized by a second number of digital levels greater than the first number of digital levels.
申请公布号 US2007171730(A1) 申请公布日期 2007.07.26
申请号 US20060598117 申请日期 2006.11.08
申请人 MARVELL INTERNATIONAL LTD. 发明人 RAMAMOORTHY ADITYA;WU ZINING;SUTARDJA PANTAS
分类号 G11C16/04 主分类号 G11C16/04
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