发明名称 |
Method and system for error correction in flash memory |
摘要 |
A solid state non-volatile memory unit. The memory unit includes a multi-level solid state non-volatile memory array adapted to store data characterized by a first number of digital levels. The memory unit also includes an analog-to-digital converter having an input and an output. The input of the analog-to-digital converter is adapted to receive data from the multi-level solid state non-volatile memory array. The output of the analog-to-digital converter is adapted to output a digital signal characterized by a second number of digital levels greater than the first number of digital levels.
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申请公布号 |
US2007171730(A1) |
申请公布日期 |
2007.07.26 |
申请号 |
US20060598117 |
申请日期 |
2006.11.08 |
申请人 |
MARVELL INTERNATIONAL LTD. |
发明人 |
RAMAMOORTHY ADITYA;WU ZINING;SUTARDJA PANTAS |
分类号 |
G11C16/04 |
主分类号 |
G11C16/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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