发明名称 A METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE
摘要 Silicon chip having narrow pitches of Au bumps are mounted on a module substrate in such a way that while taking into consideration a difference in coefficient of thermal expansion between the silicon chip and the module substrate, a total pitch of electrode pads of the silicon chip is made narrower than a total pitch of the Au bumps, thereby preventing misregistration between the Au bumps and the electrode pads in the course of heat treatment to ensure reliable contact therebetween.
申请公布号 KR100743342(B1) 申请公布日期 2007.07.26
申请号 KR20010040260 申请日期 2001.07.06
申请人 发明人
分类号 H01L25/18;H01L27/14;H01L21/60;H01L23/498;H01L23/528;H01L25/04 主分类号 H01L25/18
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