| 摘要 |
PROBLEM TO BE SOLVED: To facilitate control of the etching rates of a movable part and a fixed part in sacrifice layer etching, in a manufacturing method of a semiconductor dynamic quantity acceleration sensor for forming a groove for partitioning the movable part and fixed part in a second silicon layer and then performing the sacrifice layer etching via a groove. SOLUTION: The groove 14 is formed in the second silicon layer 12 of an SOI substrate 10 where the second silicon layer 12 is stacked on a first silicon layer 11 via a silicon oxide film 13 to partition the movable part 20 and the fixed parts 30, 40 and 50, an electron beam is radiated through the groove 14 to the silicon oxide film 13 exposed via the groove 14, then the sacrifice layer etching is performed via the groove 14, and the oxide film 13 positioned in the lower part of the movable part 20 is removed. COPYRIGHT: (C)2007,JPO&INPIT
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