| 摘要 |
PROBLEM TO BE SOLVED: To provide a pulling device for a silicon single crystal, enhancing the yield of a single crystal portion by suppressing occurrence of the dislocation of silicon single crystal ingot when doping impurities (dopant) having large segregation coefficient, and further enhancing the uniformity of resistivity distribution in a wafer surface when processed into a silicon wafer. SOLUTION: In the pulling device, a convection-controlling member 31 is set in the silicon melt 7 of a quartz crucible 12 to control the convection of the melt 7, and is supported by a support mechanism at one end. The support mechanism is provided with a supporting rod 33 comprising a first supporting rod 33a made of quartz and a carbon-made second supporting rod 33b connected thereto, and further provided with a supporting fixture 34 comprising the first and second fixtures 34a and 34b to vertically movably support the rod 33 at the upper and lower parts of the shielding tube 37. COPYRIGHT: (C)2007,JPO&INPIT
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