| 摘要 |
In a silicon crystallization mask that may be used to enhance electrical characteristics of silicon, an apparatus for crystallizing silicon having the mask and a method for crystallizing silicon using the apparatus, the mask includes first slits and second slits. The first slits are configured to transmit light and are arranged substantially parallel to one another along a first direction. The second slits transmit light, are separated by a predetermined distance along a second direction, and are arranged substantially parallel to one another along the first direction. Imaginary central lines of the first slits are offset from imaginary central lines of the second slits. Therefore, nuclei originated from a center portion of an area irradiated by the laser beam may be removed, and thus the electrical characteristics of silicon can be enhanced.
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