发明名称 Ion implantation system having variable screen aperture and ion implantation method using the same
摘要 An ion implantation system includes a source portion, a beam line portion, a target chamber having a platen, and a Faraday portion having a dose cup and a first variable screen aperture, wherein the platen is capable of moving in a second direction and supporting a semiconductor substrate, and the first variable screen aperture includes a first opening having a first adjustable width along a first direction.
申请公布号 US2007173043(A1) 申请公布日期 2007.07.26
申请号 US20070655114 申请日期 2007.01.19
申请人 LEE SEUNG-HEE;YANG YOUNG-SOO;KIM SEUNG-CHUL;CHOI CHAN-SEUNG;JANG WON-BAE;KIM MIN-SUK 发明人 LEE SEUNG-HEE;YANG YOUNG-SOO;KIM SEUNG-CHUL;CHOI CHAN-SEUNG;JANG WON-BAE;KIM MIN-SUK
分类号 H01L21/425 主分类号 H01L21/425
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