发明名称 |
Methods for manufacturing dense integrated circuits |
摘要 |
One inventive aspect relates to a method for forming integrated circuits and circuits obtained therewith. The method of forming a circuit pattern in a device layer of a semiconductor substrate comprises decomposing the circuit pattern in two constituent orthogonal subpatterns. The method further comprises transferring the pattern of a first subpattern to a hard mask layer overlying the device layer. The method further comprises transferring the pattern of the other subpattern to a photosensitive layer overlying the patterned hard mask layer. The method further comprises patterning the device layer using the patterned hard mask layer and the patterned photosensitive layer as a mask. The method further comprises removing the patterned hard mask layer and the patterned photosensitive layer. Furthermore memory or logic circuits obtained using the above technique are described.
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申请公布号 |
US2007172770(A1) |
申请公布日期 |
2007.07.26 |
申请号 |
US20060645232 |
申请日期 |
2006.12.22 |
申请人 |
WITTERS LIESBETH;NACKAERTS AXEL;VERHAEGEN GUSTAAF |
发明人 |
WITTERS LIESBETH;NACKAERTS AXEL;VERHAEGEN GUSTAAF |
分类号 |
G03F7/20 |
主分类号 |
G03F7/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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