发明名称 Methods for manufacturing dense integrated circuits
摘要 One inventive aspect relates to a method for forming integrated circuits and circuits obtained therewith. The method of forming a circuit pattern in a device layer of a semiconductor substrate comprises decomposing the circuit pattern in two constituent orthogonal subpatterns. The method further comprises transferring the pattern of a first subpattern to a hard mask layer overlying the device layer. The method further comprises transferring the pattern of the other subpattern to a photosensitive layer overlying the patterned hard mask layer. The method further comprises patterning the device layer using the patterned hard mask layer and the patterned photosensitive layer as a mask. The method further comprises removing the patterned hard mask layer and the patterned photosensitive layer. Furthermore memory or logic circuits obtained using the above technique are described.
申请公布号 US2007172770(A1) 申请公布日期 2007.07.26
申请号 US20060645232 申请日期 2006.12.22
申请人 WITTERS LIESBETH;NACKAERTS AXEL;VERHAEGEN GUSTAAF 发明人 WITTERS LIESBETH;NACKAERTS AXEL;VERHAEGEN GUSTAAF
分类号 G03F7/20 主分类号 G03F7/20
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