发明名称 A METHOD OF FABRICATING A COMPOSITE SUBSTRATE WITH IMPROVED ELECTRICAL PROPERTIES
摘要 <p>A method for fabricating a composite substrate is provided to produce the composite substrate having at least one insulating layer having improved electrical properties between a support substrate and an active layer. An insulating layer(32) is formed on a source substrate, and an insulating layer(31) is formed on a support substrate(1). The insulating layers are subjected to selective recovery heat treatment. Any one of a front surface of the insulating layer of the source substrate and a front surface of the support substrate or a front surface of the insulating layer of the support substrate is subjected to plasma activation process. A back portion of the source substrate is lifted off from the bonded substrate to prepare a composite substrate.</p>
申请公布号 KR20070077439(A) 申请公布日期 2007.07.26
申请号 KR20060135340 申请日期 2006.12.27
申请人 S.O.I. TEC SILICON ON INSULATOR TECHNOLOGIES (S.A.) 发明人 ALLIBERT FREDERIC;KERDILES SEBASTIEN
分类号 H01L21/20;H01L21/324 主分类号 H01L21/20
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