发明名称 |
A METHOD OF FABRICATING A COMPOSITE SUBSTRATE WITH IMPROVED ELECTRICAL PROPERTIES |
摘要 |
<p>A method for fabricating a composite substrate is provided to produce the composite substrate having at least one insulating layer having improved electrical properties between a support substrate and an active layer. An insulating layer(32) is formed on a source substrate, and an insulating layer(31) is formed on a support substrate(1). The insulating layers are subjected to selective recovery heat treatment. Any one of a front surface of the insulating layer of the source substrate and a front surface of the support substrate or a front surface of the insulating layer of the support substrate is subjected to plasma activation process. A back portion of the source substrate is lifted off from the bonded substrate to prepare a composite substrate.</p> |
申请公布号 |
KR20070077439(A) |
申请公布日期 |
2007.07.26 |
申请号 |
KR20060135340 |
申请日期 |
2006.12.27 |
申请人 |
S.O.I. TEC SILICON ON INSULATOR TECHNOLOGIES (S.A.) |
发明人 |
ALLIBERT FREDERIC;KERDILES SEBASTIEN |
分类号 |
H01L21/20;H01L21/324 |
主分类号 |
H01L21/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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