| 摘要 |
A method for manufacturing a semiconductor substrate, a method for fabricating a semiconductor device and a semiconductor device manufactured by the same are provided to create voids between a sidewall of a first silicon layer and a support for lessening stress applied to a first silicon layer. An isolation layer(12) is formed on a semiconductor substrate, and a first semiconductor layer is formed on the substrate. A second semiconductor layer having an etching selection ratio smaller than that of the first semiconductor layer is formed on the first semiconductor layer. Portions of the first and second semiconductor layers which correspond to regions for the support holes are removed to form support holes. A support forming layer is formed on the semiconductor substrate to cover the support holes and the second semiconductor layer. Exposed surfaces are etched to expose a support(26) and portions of end portions of the first and second semiconductor layers. A first cavity(29) is formed between the second semiconductor layer and the semiconductor substrate by etching the first semiconductor layer through the exposed surfaces. A buried insulating layer is formed in the first cavity portion, and the second semiconductor layer is planarized.
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