| 摘要 |
PROBLEM TO BE SOLVED: To prevent the variation in developing pattern size near one end of a substrate and near the other end due to a time difference in the feed of a developer, in a developing method using a developing device for scanning a semiconductor substrate having an exposed photosensitive resin film with a rod-like developer jetting nozzle having a size corresponding to the diameter of the semiconductor substrate, in the still state of the substrate. SOLUTION: The jetting is started from one end P1 of the substrate at a jetting speed WL, and the speed is gradually increased to reach the speed of WL at the other end P2 of the substrate. In this way, while the developing is started earliest near the one end P1 of the substrate, since the jetting speed of the developer is the low speed WL in this part, that means the amount of developer locally applied to this part is small, the liquid is consumed to solve the excessive resist and the developing speed accordingly slow, and thus, the difference can be shortened between the developing speeds between both the ends P1 and P2 of the substrate. COPYRIGHT: (C)2007,JPO&INPIT |
