| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device having a MISFET capable of raising electric current drivability without changing a condition in depositing and a membrane thickness, and to provide its manufacturing method. SOLUTION: A gate insulating membrane 14 and a gate electrode 15a are formed on a semiconductor substrate 10 in an active region. Source-drain regions 10c are formed at both the sides of the gate electrode 15a in the semiconductor substrate 10. A stress membrane 16 is formed so as to cover the gate electrode 15a, and brought into contact with the active region of the semiconductor substrate 10 at both the ends of the extending direction of the gate electrode 15a. The stress of the stress membrane 16 to work on the active region of the semiconductor substrate 10 includes the stress to work in the extending direction of the gate electrode 15a. COPYRIGHT: (C)2007,JPO&INPIT
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