| 摘要 |
PROBLEM TO BE SOLVED: To chemically join a joint surface between a semiconductor device or a heat conductor and a diamond heat spreader at normal temperature not by using an adhesive agent but by activation. SOLUTION: The present normal temperature joint method bonds a copper or aluminum heat sink and heat spreader (metallic heat conductor) to a semiconductor device through a diamond heat spreader. A diamond heat spreader obtained as a diamond film cut out of natural diamond and the like or film-formed by a vapor-phase synthetic method planarizes a surface joined to the semiconductor device and to the metallic heat conductor to an average asperity (Ra) of 30 nm or less by using direct polishing or polishing a metal film formed on the surface, and a rare beam of argon (Ar) and the like are irradiated to a joint surface between the normal temperature diamond heat spreader and the semiconductor device, and between the diamond heat spreader and the metallic heat conductor located under a vacuum or inactive gas atmosphere, thereby activating and bonding them. COPYRIGHT: (C)2007,JPO&INPIT
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