发明名称 Method of manufacturing a solid-state imaging device
摘要 A method of manufacturing a solid-state imaging device, wherein the solid-state imaging device comprising: a semiconductor substrate; a plurality of photodiodes that are formed on a surface of the semiconductor substrate so as to be arranged in an array form; and a light shielding film, provided on or above the surface of the semiconductor substrate, that has a plurality of openings in correspondence with respective ones of the photodiodes, the method comprising: laminating, on the surface of the semiconductor substrate, lamination layers including the light shielding film; opening through holes in the lamination layers, respectively, at positions corresponding to the photodiodes to form the openings in the light shielding film; forming a low refractive index material layer with a predetermined thickness isotropically on a side wall surface of each of the through holes; and filling a remaining hole portion of each of the through holes with a high refractive index material to form an optical waveguide for guiding incident light to each of the photodiodes.
申请公布号 US2007172970(A1) 申请公布日期 2007.07.26
申请号 US20070656450 申请日期 2007.01.23
申请人 FUJIFILM CORPORATION 发明人 UYA SHINJI
分类号 H01L21/00;H01L27/14;H01L31/10;H04N5/335;H04N5/369 主分类号 H01L21/00
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