摘要 |
<p>An ion implantation system (100) including an ion source adapted to ionize a precursor vapor to form ions for implantation in a substrate (30), a material storage and dispensing apparatus including a vessel (102) adapted to hold precursor, and a dispensing assembly (104, 108) coupled to the vessel for dispensing precursor from the vessel. The dispensing assembly is coupled with the ion source (10), and a heater (106) is adapted for heating of the precursor in the vessel so that precursor dispensed from said apparatus to the ion source is maintained in a vapor phase for implantation of ions derived therefrom. Such system is adaptable for delivery of indium monochloride, e.g., from a portable material storage and dispensing apparatus, without the necessity of a vaporizer integrated into the housing of the ion source, and without the handling and processing issues attendant the use of indium trichloride.</p> |
申请人 |
ADVANCED TECHNOLOGY MATERIALS, INC.;KAIM, ROBERT;MARGANSKI, PAUL, J.;SWEENEY, JOSEPH, D.;ARNO, JOSE, I. |
发明人 |
KAIM, ROBERT;MARGANSKI, PAUL, J.;SWEENEY, JOSEPH, D.;ARNO, JOSE, I. |