发明名称 REMOTE TYPE PLASMA PROCESSING METHOD
摘要 <P>PROBLEM TO BE SOLVED: To improve plasma processing efficiency, in a remote plasma processing method. <P>SOLUTION: This plasma processing method uses a plasma processing device equipped with a pair of electrodes 4A and 4B facing to each other, and a solid dielectric layer 5 or 6 installed on a facing surface of at least one of the pair of electrodes. A processing gas 9 having a pressure above the atmospheric pressure is introduced into a discharge space 8, the processing gas 9 is activated by using discharge by application of a pulse voltage to the pair of electrodes, and a processing object 11 is exposed to the activated processing gas. A gap interval (d) of the discharge space, the average electric field intensity between the electrodes and the pulse width of the pulse voltage are not greater than 0.3 mm, not smaller than 10 kV/cm and not longer than 5 &mu;sec, respectively. <P>COPYRIGHT: (C)2007,JPO&INPIT
申请公布号 JP2007188748(A) 申请公布日期 2007.07.26
申请号 JP20060005714 申请日期 2006.01.13
申请人 NGK INSULATORS LTD 发明人 TANGE MASAJI;SAKUMA TAKESHI
分类号 H05H1/24;C23C16/515 主分类号 H05H1/24
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