| 摘要 |
PROBLEM TO BE SOLVED: To provide a cleaning composition and method for removing residues such as, for example, remaining photoresist and/or residues resulting from etching and/or ashing. SOLUTION: The residue cleaning composition includes: (a) water; (b) a fluoride; and (c) a pH buffer system including an organic acid and a base. The organic acid can be an aminoalkylsulfonic acid and/or an aminoalkylcarboxylic acid. The base can be an amine and/or a quaternary alkylammonium hydroxide. The composition is substantially free of an added organic solvent and has a pH ranging from about 5 to about 12. A method for removing residue from a substrate includes contacting the residue with the cleaning composition. A method for defining a pattern includes etching the pattern through a photoresist into a substrate, heating the patterned substrate to a temperature sufficient to ash the photoresist and provide a residue, and removing the residue by bringing the residue into contact with the cleaning composition. COPYRIGHT: (C)2007,JPO&INPIT |
