SEMICONDUCTOR LIGHT EMITTING ELEMENT, GROUP III NITRIDE SEMICONDUCTOR SUBSTRATE AND METHOD FOR MANUFACTURING SUCH GROUP III NITRIDE SEMICONDUCTOR SUBSTRATE

摘要

In a semiconductor light emitting element using a group III nitride semiconductor substrate, a dopant species of the substrate and the concentration of the dopant species are controlled, and the semiconductor light emitting element having excellent light extracting characteristics is obtained. The semiconductor light emitting element is provided with the substrate composed of a group III nitride semiconductor including germanium (Ge) as dopant; an n-type semiconductor layer which is arranged on the substrate and is composed of a group III nitride semiconductor; and a p-type semiconductor layer which is arranged on an active layer and is composed of the group III nitride semiconductor. The concentration of the germanium (Ge) in the substrate is 2×10¹⁷-2×10¹⁹cm^-3. The substrate is manufactured by using a melt including at least a group III element, an alkaline metal or an alkaline earth metal, germanium (Ge) and nitrogen, under an atmosphere including nitrogen.