发明名称 Piezoelectric element and manufacturing method and manufacturing device thereof
摘要 By setting the thickness of the Ti core layer formed between the lower electrode (42) and the piezoelectric film (43) in the range of 4-6nm and adjusting the thickness ratio of the Pt (424) layer in relation to the thickness of the entire lower electrode (42), the (100) face orientation degree of a piezoelectric thin film (43) may be set to a prescribed ratio with favorable reproducibility. Preferably, the (100) face orientation degree of the piezoelectric thin film is not less than 40% and not more than 70% or less, the (110) face orientation degree is 10% or less, and the (111) face orientation degree is the remaining portion thereof. Further, by applying heat from the lower electrode side upon calcinating the piezoelectric precursor film, it is possible to obtain satisfactory crystallinity as the crystal growth begins from the lower electrode side and reaches the upper part of the film. Accordingly, piezoelectric properties of the piezoelectric thin film are improved, and a highly reliable inkjet recording head and printer may be obtained thereby. <IMAGE>
申请公布号 EP1675193(A3) 申请公布日期 2007.07.25
申请号 EP20060004659 申请日期 2001.03.22
申请人 SEIKO EPSON CORPORATION 发明人 MURAI, MASAMI
分类号 H01L41/09;B41J2/14;B41J2/16;H01L41/22;H01L41/24;H01L41/318;H01L41/319 主分类号 H01L41/09
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