SPUTTERING TARGET FOR HALF-TONE PHASE SHIFT BLANKMASK, HALF-TONE PHASE SHIFT BLANKMASK AND PHOTOMASK AND MANUFACTURING METHOD THEREOF

摘要

A sputtering target for a half-tone phase shift blank mask, a half-tone phase shift blank mask, a photomask and a manufacturing method thereof are provided to form a phase shift mask, in which chemical reaction sufficiently happens, by using a metal compound target. A sputtering target is used to manufacture a half-tone phase shift black mask(100) having transmission of 0.1 percentage or more at an exposure wavelength of 500nm or less. The sputtering target is made of at least one selected from the group consisting of Groups 2, 3, 4 and 5, transition metals, lanthanoids and actinides. If the sputtering target is made of only transition metals and silicon, contents of the silicon is 66mol% or less.