| 摘要 |
A semiconductor device is provided with a semiconductor substrate (1), an ONO film (4) which is formed on the semiconductor substrate (1) and has a contact hole (11) formed thereon and an interlayer insulating film (10) which is formed directly on the ONO film (4), and the interlayer insulating film contains phosphorus. The interlayer insulating film (10) includes a phosphorus of 4.5wt% or more at an interface part facing the ONO film (4). The interlayer insulating film (10) is provided with a first part (8) which is brought into contact with the ONO film (4), and a second part (9) which is provided on the first part, and the phosphorus concentration of the first part is that of the second part or more. |
