SOI SUBSTRATE AND METHOD FOR FORMING THE SAME

摘要

A SOI(Silicon On Insulator) substrate and a manufacturing method thereof are provided to radiate the heat generated from a device onto a lower silicon substrate through silicon plugs. An insulating layer(220) is formed on a first silicon substrate(210), and then is etched to form plural contact holes exposing the first silicon substrate. The exposed silicon substrate is selectively epitaxially grown to plural silicon plugs(225) which fill the contact holes. The first silicon substrate is connected to a second silicon substrate via the silicon plugs formed on the insulating layer. The insulating layer is formed by subjecting a thermal oxidation process on the first silicon substrate.