| 摘要 |
A method for forming an isolation layer in a semiconductor device is provided to increase isolation characteristics through increase of a length of the isolation layer by exposing a substrate of a lower surface corner of a trench to grow a silicon epi layer and gap-filling a dielectric in the trench whose lower surface corner is protruded toward the inside. A pad oxide layer(2) and a pad nitride layer(3) are formed in turn on a silicon substrate(1). The pad nitride layer, the pad oxide layer, and a substrate are etched to form a trench(4). A deposition layer is formed on the resultant substrate structure where the trench is formed, thereby being disconnected around the corner of a lower surface of the trench. The deposition layer is etched to expose the substrate of the corner of the lower surface of the trench. A silicon epitaxial layer(6) is grown on the exposed substrate. The deposition layer is completely removed. An oxidation process is performed on the resultant substrate structure having the trench whose corner is protruded toward the inside. A gap-filling dielectric is deposited to gap-fill the trench. A CMP process is performed on the gap-filling dielectric to expose the pad nitride layer. The pad nitride layer and the pad oxide layer are removed.
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