MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE

摘要

A method for manufacturing a semiconductor device is provided to prevent metal bridges during a subsequent metal deposition process by forming a fence using a cell open mask. A dielectric is formed on an upper portion of a semiconductor substrate(111) having a capacitor. A photoresist layer is formed on an upper portion of the dielectric. A photoresist pattern is formed with an exposure process and a developing process using a cell open mask(113). The dielectric is etched by using the photoresist pattern as a mask to form a fence on a cell region except for a cell open region(115). The fence includes plural closed curve-type holes(117). The holes are spaced away from a most outer line of the cell region to a central direction by a distance of 0.2 mum to 0.5 mum. The holes are spaced away from the most outer line of the cell open region to a peripheral circuit region direction by a distance of 0.1 mum to 0.5 mum.