| 摘要 |
A method for manufacturing a semiconductor device is provided to prevent residues on a boundary of a cell region and a peripheral region by forming a gate after an oxide layer, a nitride layer, a dielectric, and a second conductive layer are formed. A semiconductor substrate(100) where a cell region and a peripheral region are defined is provided. The semiconductor substrate of the peripheral region is etched in a predetermined thickness. A first conductor(104) is formed on an upper portion of the etched semiconductor substrate so that a step from the cell region is not generated. An oxide layer(106), a nitride layer(108), a dielectric(110), and a second conductive layer(112) are sequentially formed on an upper portion of the whole structure. A gate etching process is performed to form a gate.
|
