| 摘要 |
A semiconductor memory device is provided to prevent generation of bridges between byproducts of adjacent fuse lines on a sidewall by forming sidewalls of an upper guard ring pattern and a fuse window perpendicular to the fuse lines in a saw-tooth shape. Plural fuse lines(125) are formed on a substrate(100). A fuse window(135) exposes the fuse lines and has a saw-tooth sidewall. A saw-tooth guard ring(140) is conformally formed with the sidewall of the fuse window around the fuse window to prevent moisture penetration through the fuse window. The guard ring is comprised of plural guard ring patterns(112,122,132) and plural guard ring contacts(114,124). A top guard ring pattern has a saw-tooth shape. The fuse lines are formed on a lower layer of the top guard ring pattern. The fuse window and the saw-tooth guide ring are provided with a protrusion formed toward orientation of the fuse line.
|
