SEMICONDUCTOR DEVICE AND FABRICATION METHOD FOR THE SAME

摘要

A semiconductor device and its manufacturing method are provided to reduce generation of voids on a sidewall oxide layer and to improve semiconductor device characteristic by forming a sidewall hydrophilic layer on the sidewall oxide layer. A trench(130) is formed in a semiconductor substrate(100). A sidewall oxide layer(201) is formed on a sidewall(120) of the trench and exposes a bottom surface of the trench. A sidewall hydrophilic layer(301) is formed on the sidewall oxide layer and exposes the bottom surface of the trench. A field dielectric(400) is contacted to the bottom surface of the trench where the sidewall oxide layer and the sidewall hydrophilic layer are formed. The trench is gap-filled with the field dielectric. The sidewall hydrophilic layer is a silicon nitride or a silicon oxy-nitride. The sidewall hydrophilic layer formed on the sidewall oxide layer reduces generation of voids and improves the characteristic of a semiconductor device.