| 摘要 |
A single crystal silicon wafer for an IGBT(Insulated Gate Bipolar Transistor) and a manufacturing method thereof are provided to increase yield and to lower nonuniformity of resistivity by using the single crystal silicon wafer having an interstitial oxygen concentration of 7.0X10^17 atoms/cm^3 below. The single crystal silicon wafer for an IGBT having a gate oxide layer of 50 to 150 nm thickness is made of a single crystal silicon grown by a Czochralski method. An interstitial oxygen concentration of the single crystal silicon wafer is 7.0X10^17 atoms/cm^3 below and nonuniformity of resistivity in a surface of the single crystal silicon wafer is 5 % below. In case the thickness of the gate oxide layer is to x and an electrode area is S, a concentration d of a COP(Crystal Originated Particle) in the single crystal silicon having a size twice than the thickness of the gate oxide layer satisfies a relationship of d -Ln(.09)/(S.tox/2). |
