METHOD OF MANUFACTURING LED HAVING VERTICAL STRUCTURE

摘要

A method for manufacturing a vertical-type light emitting device is provided to simplify the process and to minimize damages of device during a chip dividing process by thinning a metal supporting unit. Plural semiconductor layers(20) are grown on an insulating substrate. The semiconductor layers are etched to divide a unit device region. A first electrode(40) is formed on the semiconductor layer. The semiconductor layer is etched to form a passivation layer(50) for insulating an exposed surface thereof. A seed metal(60) is formed on the passivation layer. A PR(PhotoResist) post(80) is formed on the seed metal of the etched portion. A metal supporting unit(70) is formed on the seed metal. The insulating substrate is removed. A second electrode is formed on a surface of each semiconductor layer whose insulating substrate is removed. The metal supporting unit is thinned. The semiconductor layers are divided into each device.