PAD WIRE STRUCTURE FOR SEMICONDUCTOR DEVICE AND MAKING METHOD THEREOF

摘要

A pad wiring structure of a semiconductor device and a method for forming the same are provided to decrease a space occupied by the pad wiring structure, as well as having a protection function of applying only a voltage of a given range. A first conductive layer(314) is formed in a substrate(312) of a first conductive type. The first conductive layer has the same conductive type as that of the substrate. A second conductive layer(324) is formed on the substrate, and has a second conductive type different from that of the substrate. Metal pad layers(318,328) are formed on the first conductive layer and the second conductive layer. A via is formed between the first conductive layer and the metal pad layer and/or between the second conductive layer and the metal pad layer.