摘要 |
A photoelectric conversion device capable of improving an open-circuit voltage is obtained. In this photoelectric conversion device, many of crystal grains(5a,15a) contained in a third non-single-crystalline semiconductor layer(5,15) have major axes substantially perpendicular to a main surface (1a,11a) of a substrate (1,11) on an interfacial portion between at least either a first non-single-crystalline semiconductor layer or a second non-single-crystalline semiconductor layer and the third non-single-crystalline semiconductor layer, and many of crystal grains(4a,19a) contained in either semiconductor layer have major axes substantially parallel to the main surface of the substrate on the aforementioned interfacial portion.
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