| 摘要 |
A method for calculating capacitance of LDMOS transistor is provided to accurately obtain gate-drain overlap capacitance without changing the area of an existing test structure. A pad which connects a source (S) and a drain terminal(D) of an LDMOS(Lateral Double-diffused MOS) transistor device with a board is connected to a first port of capacitor measuring equipment, and a gate terminal of the device is connected to a second port, thereby measuring first gate capacitance. A pad connecting the source terminal with a board is connected to the first port, and the gate terminal of the device is connected to the second port, thereby measuring second gate capacitance. A gate-drain overlap capacitance is obtained by computing a difference between first and second gate capacitances.
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