发明名称 SEMICONDUCTOR MEMORY DEVICE
摘要 A semiconductor memory device is provided to convert a number of bit data which are input in parallel, into one bit pulse data, and to transmit the one bit pulse data through one global line. A global line has a single line for data exchange between a memory core region and an input/output interface. A transmitter unit(100) receives data of a number of bits and then modulates the data into one bit pulse signal having pulse width corresponding to the value of the data and then transmits the data through the global line. A receiver unit(200) receives the pulse signal transmitted through the global line, and demodulates the pulse signal into data corresponding to the pulse width of the pulse signal. A reference clock generation unit(300) synchronizes the transmitter unit and the receiver unit.
申请公布号 KR100744644(B1) 申请公布日期 2007.07.25
申请号 KR20060050574 申请日期 2006.06.05
申请人 HYNIX SEMICONDUCTOR INC. 发明人 HA, SUNG JOO
分类号 G11C11/4096 主分类号 G11C11/4096
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