发明名称 SUBSTRATE PROCESSING METHOD, SUBSTRATE PROCESSING DEVICE AND MANUFACTURING METHOD FOR SEMICONDUCTOR DEVICE
摘要 A substrate processing method, a substrate processing apparatus, and a method for fabricating a semiconductor device are provided to obtain a wiring pattern with high dimensional precision and good pattern shape by using a wafer that is applied with hydrophobic treatment. While a liquid is supplied between a processing target substrate which is subjected to exposure treatment and a projection optical system(4) of an exposure apparatus for performing the exposure treatment, at least hydrophobic treatment is applied to a region in a predetermined range from a peripheral rim part of a second main face opposite to a first main face, before a resist film is formed on the first main face of the processing target substrate that is provided for liquid immersion exposure for carrying out the exposure treatment at a side to be applied with the exposure treatment.
申请公布号 KR20070077107(A) 申请公布日期 2007.07.25
申请号 KR20070005952 申请日期 2007.01.19
申请人 KABUSHIKI KAISHA TOSHIBA 发明人 SHIOBARA EISHI;MATSUNAGA KENTARO;KAWAMURA DAISUKE;TAKEISHI TOMOYUKI;HAYASAKI KEI;ITO SHINICHI
分类号 H01L21/027 主分类号 H01L21/027
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