| 摘要 |
<p>A method for manufacturing a high voltage device is provided to improve a breakdown voltage by tilt-implanting impurity after forming a source junction and a drain junction. A gate(11) is formed on one region of a semiconductor substrate(10). First impurities are implanted into the semiconductor substrate at both sides of the gate to form junctions(12,13) of low concentration. Second impurities are implanted into the semiconductor substrate by using the gate as a mask. The second impurities have a conductive type opposite to that of the first impurities. First impurities of high concentration are implanted into the low concentration junctions to form a source junction(14) and a drain junction(15). The first impurities are tilt-implanted into the semiconductor substrate by using the gate as a mask.</p> |
