Methods for enhancing the metal removal rate during the chemical-mechanical polishing process of a semiconductor,申请号EP19990121400-传众专利搜索

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发明名称	Methods for enhancing the metal removal rate during the chemical-mechanical polishing process of a semiconductor
摘要
申请公布号	EP1011131(B1)	申请公布日期	2007.07.25
申请号	EP19990121400	申请日期	1999.10.27
申请人	INFINEON TECHNOLOGIES AG	发明人	SCHUTZ, RONALD JOSEPH
分类号	H01L21/304;H01L21/321;C09K3/14;H01L21/285;H01L21/768	主分类号	H01L21/304
代理机构		代理人
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