External cavity semiconductor laser and method for fabrication thereof

摘要

The present invention concerns a design for an external cavity single mode laser (100) wherein a short optical path length for the optical cavity (103;e.g., ~3 to 25 mm) provides sufficient spacing of the longitudinal modes allowing a single wavelength selective element, such as a microfabricated etalon (120), to provide a single mode of operation, and optionally a selectable mode of operation.