METHOD FOR CRYSTAL GROWTH OF NITRIDE SEMICONDUCTOR

摘要

A method for growing a nitride-based compound semiconductor is provided to reduce the number of growing cores, threading dislocation, and residual stress by using only a first GaN epi formed on upper portions of protrusions as the growing core. Plural separated protrusions(105) are formed on a substrate. A dielectric and a metal thin film are sequentially formed on an upper portion of the substrate. A thermal process is performed on the metal thin film to form plural separated metal aggregations. The dielectric is etched by using the metal aggregations as etch masks to form plural separated rods on an upper portion of the substrate. The substrate is etched by using the rods as etch masks. First GaN epis are formed between the protrusion and the upper portion thereof. The first GaN epis formed on the upper portion of the protrusion are laterally grown to form a second GaN epi.