发明名称 BAND GAP CIRCUIT
摘要 A band gap circuit is provided to prevent an output voltage from being abruptly grounded after the variation of a supply voltage, by preventing an excessive current from being applied to a bipolar transistor. A band gap circuit includes a differential amplifier circuit, a pair of PMOS(Positive Metal Oxide Semiconductor) transistor(P112,P113), and a level shifter circuit. Source terminals of the PMOS transistors are connected to each other. The level shifter circuit is connected to gate terminals of the PMOS transistors. The gate terminals are used as input terminals. Each of the PMOS transistors includes a back-gate which is connected to source terminals of the PMOS transistors. The PMOS transistors have a bigger aspect ratio than the rest PMOS transistors in the band gap circuit.
申请公布号 KR20070077142(A) 申请公布日期 2007.07.25
申请号 KR20070006746 申请日期 2007.01.22
申请人 SEIKO INSTRU INC. 发明人 UEHARA OSAMU
分类号 G05F3/24 主分类号 G05F3/24
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