METHOD OF MANUFACTURING SEMICONDUCTOR DECIVE

摘要

A method for manufacturing a semiconductor device is provided to easily perform a spacer etching process by making a part of a dielectric for a spacer into an etch-vulnerable layer and using an etching removal speed of the etch-vulnerable layer. A semiconductor substrate(10) where a conductive pattern(20) is formed is prepared. A dielectric for a spacer is formed on the entire surface of the substrate including the conductive pattern. An implantation process is performed on the dielectric for a spacer to make the dielectric for a spacer part formed on an upper surface of the conductive pattern and the surface of the substrate into an etch-vulnerable layer. The etch-vulnerable layer is selectively removed to form a spacer(50) on a sidewall of the conductive pattern. The conductive pattern is a gate or a bit line.