| 摘要 |
<p>A NAND type semiconductor memory apparatus and its manufacturing method are provided to reduce manufacturing costs and to improve characteristics of a memory cell by selectively forming an SOI(Silicon On Insulator) structure on a memory cell region of a conventional semiconductor substrate without using an SOI substrate. A semiconductor layer(50) is formed on a semiconductor substrate(30). A buried dielectric(40) is selectively formed between the semiconductor substrate and the semiconductor layer in a transistor forming region(10A). A floating body region is formed on the semiconductor layer of the transistor formation region. The floating body region is maintained between diffusion layers(150). A first dielectric is formed on the floating body region. A floating gate electrode(100) is formed on the first dielectric. A control electrode(120) is formed on a second dielectric formed on the floating gate electrode. Contact plugs(70,80) are connected to the diffusion layer on an end of the transistor forming region. The diffusion layer on the end of the transistor forming region is connected to the semiconductor substrate under the contact plug.</p> |
