| 摘要 |
<p>A method for manufacturing a semiconductor device is provided to prevent the overlap of lengths of gates and to lower doping concentration in a halo ion implantation process by forming a shallow junction region and securing an effective channel length. A semiconductor substrate(10) is etched to form a groove(60). A channel ion implantation is performed on a surface of the substrate where the groove is formed. A gate(110) is formed on the groove. A halo ion implantation is performed on the resultant substrate structure where the gate is formed. A spacer(120) is formed on both sidewalls of the gate. A source/drain region(130) is formed in the surface of the substrate at both sides of the gate including the spacer. An interlayer dielectric(140) is formed on the entire surface of the substrate to cover the gate. The interlayer dielectric is etched to form a contact hole(150) exposing the gate and the source/drain region of the substrate. An LDD(Lightly Doped Drain) region(160) is formed in the source/drain region.</p> |
