| 摘要 |
A transistor for a sense amplifier of a semiconductor device is provided to prevent the thickness change of a gate CD(Critical Dimension) and an insulating spacer by forming a dummy gate at an isolation layer between transistor forming regions. An isolation layer(310) is formed on a semiconductor substrate(300) so that two transistor forming regions connected to each other on a sense amp forming region are separated from another two transistor forming regions connected to each other in a longitudinal direction. L-type gates(320) are symmetrically formed on each of the two transistor formation regions. A dummy gate(320') is formed on the isolation layer between the transistor forming regions to have uniform pattern density on the sense amp forming region. A source region(340a) and a drain region(340b) are formed on a surface of the transistor forming regions at both sides of the L-type gate.
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