| 摘要 |
A semiconductor laser diode and a method for fabricating the same are provided to simplify a manufacture process and to improve productivity yield by forming an n-pad electrode as a transparent conductive material such as a transparent conductive oxide. A semiconductor laser diode includes a nitride substrate(100). The nitride substrate(100) is a free standing substrate made of n-GaN or n-AlN and has a thickness ranging from 80 to 150. The n-type clad layer(110) is formed on an upper part of the nitride substrate(100) and is made of Inx(AlyGa1-y)N having a predetermined refractive index. The x and y are between 0 and 1. The n-type waveguide layer(120) is formed on an upper part of the n-type clad layer(110) and is mainly made of n-GaN having the refractive index less than the refractive index of the active layer(130). The active layer(130) is formed on an upper part of the n-type wave guide layer(120) as a single quantum-well structure or a multiple-quantum-well structure. The quantum-well structure consists of Inx(AlyGa1-y)N of a barrier layer and Inx(AlyGa1-y)N of a well layer. The p-type wave guide layer(140) is formed on an upper part of the active layer(130) and is mainly made of p-GaN having the refractive index less than the refractive index of the active layer(130). The p-type clad layer(150) is formed on an upper part of the p-type wave guide(140) and is made of the same material with the n-type clad layer(110) except injected conductive impurities. The p-pad electrode(160) is formed on an upper part of the p-type clad layer(150). The n-pad electrode(170) is formed on a lower part of the nitride substrate(100) and has a transparent conductivity and lower resistance. The n-pad electrode performs an ohmic-contact.
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