Method of cleaning a silicon-based semiconductor film-forming apparatus

摘要

Disclosed is a method of manufacturing a semiconductor device, in which a substrate (13) is successively transferred through a first film-forming chamber (4) for forming a semiconductor layer of a first conductivity type, a second film-forming chamber (5) for forming an i-type semiconductor layer, and a third film-forming chamber (6) for forming a semiconductor layer of a second conductivity type, thereby forming successively a semiconductor layer of a first conductivity type, an i-type semiconductor layer, and a semiconductor layer of a second conductivity type on the substrate (13). The method comprises the step of simultaneously transferring the substrates (13) arranged within the first, second and third film-forming chambers (4, 5, 6) and each having a semiconductor layer into adjacent chambers on the downstream side.