| 摘要 |
A ferroelectric material for a manufacturing a ferroelectric memory is provided to improve polarization characteristic and to lower an operation voltage by using a PVDF(polyvinylidene fluoride) having a -phase as the ferrodielectric material. Source and drain regions(2,3) are formed on a silicon substrate(1). A ferroelectric layer(60) is formed on a channel region(4) between the source and the drain regions. A PVDF(polyvinylidene fluoride) having a -phase is used as the ferroelectric layer. Source and drain electrodes(6,7) are made of conductive materials and formed on the source and drain regions. A gate electrode(8) made of a conductive material is formed on an upper of the ferroelectric layer.
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