发明名称 |
Semiconductor device and its process of fabrication |
摘要 |
The multilayer semiconductor circuit (100) has a substrate (101) made of silicon. A first porous layer (104) is formed in the central part of the top surface of the substrate. A cavity may be formed under this porous layer, and the cavity may have an external opening to provide access. A second porous layer (105) may be formed under the first, with larger pores. A masking layer (102) may be formed on either side of or surrounding the porous layers. |
申请公布号 |
EP1810947(A2) |
申请公布日期 |
2007.07.25 |
申请号 |
EP20070107755 |
申请日期 |
2001.04.20 |
申请人 |
ROBERT BOSCH GMBH |
发明人 |
BENZEL, HUBERT;WEBER, HERIBERT;ARTMANN, HANS;SCHAEFER, FRANK |
分类号 |
G01L9/00;B81B3/00;B81C1/00;H01L21/306;H01L21/3063;H01L29/84 |
主分类号 |
G01L9/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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