EXPOSURE MASK FOR OVERLAY VERNIER

摘要

An exposure mask for an overlay vernier is provided to reduce overlay reading errors by forming an H-shaped transmission pattern and light shielding pattern on a quartz substrate. An H-shaped transmission pattern(111) formed on an upper portion a quartz substrate(100) in a rectangular structure of bilateral symmetry and vertical symmetry. A light shielding pattern(113) is formed on the upper portion of the quartz substrate except for the H-shaped transmission pattern, thereby overcoming a leaning problem at a gate light oxidization process.